ixys reserves the right to change limits, conditions and dimensions. cs 29 ? 2003 ixys all rights reserved symbol conditions maximum ratings i t(rms) t vj = t vjm 35 a i t(av)m t c = 95c; 180 sine (i t(rms) current limit) 23 a i tsm t vj = 45c; t = 10 ms (50 hz), sine 200 a v r = 0 v t = 8.3 ms (60 hz), sine 215 a t vj = t vjm ; t = 10 ms (50 hz), sine 175 a v r = 0 v t = 8.3 ms (60 hz), sine 185 a i 2 t t vj = 45c; t = 10 ms (50 hz), sine 200 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 195 a 2 s t vj = t vjm ; t = 10 ms (50 hz), sine 155 a 2 s v r = 0 v t = 8.3 ms (60 hz), sine 145 a 2 s (di/dt) cr t vj = t vjm ; repetitive, i t = 40 a 150 a/s f = 50 hz; t p = 200 s; v d = 2 / 3 v drm ; i g = 0.2 a; non repetitive, i t = i t(av)m 500 a/s di g /dt = 0.2 a/s (dv/dt) cr t vj = t vjm ;v dr = 2 / 3 v drm ; 1000 v/s r gk = ; method 1 (linear voltage rise) p gm t vj = t vjm ;t p = 30 s 5 w i t = i t(av)m ;t p = 300 s 2.5 w p gav 0.5 w v rgm 10 v t vj -40...+125 c t vjm 125 c t stg -40...+125 c v isol 50/60 hz rms; i isol 1 ma 2500 v~ t l 1.6 mm from case; 10 s 260 c f c mounting force 11...65 / 2.4...11 n/lb weight 2g v rrm = 800/1200 v i t(rms) = 35 a i t(av)m = 23 a v rsm v rrm type v dsm v drm vv 800 800 cs 29-08io1c 1200 1200 cs 29-12io1c features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500 v electrical isolation low cathode-to-tab capacitance (15 pf typical) planar passivated chips epoxy meets ul 94v-0 high performance glass passivated chip long-term stability of leakage current and blocking voltage applications motor control power converter ac power controller light and temperature control scr for inrush current limiting in power supplies or ac drive advantages space and weight savings simple mounting ds98839b(11/03) phase control thyristor isoplus220 tm electrically isolated back surface preliminary data sheet a c g isoplus 220 tm isolated back surface* c a g a = anode; c = cathode; g = gate
cs 29 ? 2003 ixys all rights reserved symbol conditions characteristic values i r , i d t vj = t vjm ; v r = v rrm ; v d = v drm 2ma v t i t = 45 a; t vj = 25c 1.5 v v t0 for power-loss calculations only (t vj = 125c) 0.82 v r t 16.5 m ? v gt v d = 6 v; t vj = 25c 1.0 v t vj = -40c 1.2 v i gt v d = 6 v; t vj = 25c 65 ma t vj = -40c 80 ma v gd t vj = t vjm ; v d = 2 / 3 v drm 0.2 v i gd 5ma i l t vj = 25c; t p = 10 s; 150 ma i g = 0.2; di g /dt = 0.2 a/s i h t vj = 25c; v d = 6 v; r gk = ? 50 ma t gd t vj = 25c; v d = ? v drm ; 2s i g = 0.2 a; di g /dt = 0.2 a/s r thjc dc current 1.2 k/w r thck dc current typical 0.6 k/w a max. acceleration, 50 hz 50 m/s 2 see cs 30..io1 data sheet for electrical characteristic curves. fig. 1 gate trigger range fig. 2 gate controlled delay time t gd 10 100 1000 1 10 100 1000 s t gd i g 1 10 100 1000 10000 0.1 1 10 i g v g ma v 4 2 1 5 6 ma typ. limit 3 i gd , t vj =125c 1: i gt , t vj = 125c 2: i gt , t vj = 25c 3: i gt , t vj = -40c 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w t vj = 25c isoplus220 outline pin 1: cathode pin 2: anode pin 3: gate pin 4: anode
ixys reserves the right to change limits, conditions and dimensions. cs 29 ? 2003 ixys all rights reserved 0 20 40 60 80 100 120 0 10 20 30 40 50 60 70 80 i t(av)m 0 10203040506070 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 0.001 0.01 0.1 1 0 100 200 300 400 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 i tsm i t a v t t s p t w i t(av)m a t amb c v a 12345678910 1000 i 2 t t a 2 s t case a c ms 500 2000 fig. 3 forward characteristics fig. 4 surge overload current i tsm : crest value, t: duration fig. 5 i 2 t versus time (1-10 ms) fig. 6 power dissipation versus forward current and ambient temperature t vj = 125c t vj = 45c 50hz, 80%v rrm t vj = 125c dc 180 sin 120 60 30 r thka : 0.1 k/w 0.5 k/w 1 k/w 2 k/w 4 k/w 10 k/w t vj = 45c dc 180 sin 120 60 30 v r = 0 v t vj = 25c t vj = 125c
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